Gan Schottky Diode Breakdown Voltage

Reverse I V Characteristics Of Four Gan Schottky Diodes

Concentration Effects On N Gan Schottky Diode Current

A Lateral Algan Gan Diode With Mis Gated Hybrid Anode For

Breakdown Voltage And Reverse Recovery Characteristics Of

Passivation Effect Of Graphene On Algan Gan Schottky Diode

Increasing Gan Schottky Diode Breakdown Voltage With

Evaluation By Simulation Of Algan Gan Schottky Barrier Diode

Figure 7 From Reverse Leakage Current And Breakdown Voltage

Diamond Semiconductor Technology For Rf Device Applications

Temperature Dependence Of Electrical Characteristics Of Pt

Gate Leakage Suppression And Breakdown Voltage Enhancement

1 7 Kv And 0 55 M Cm Gan P N Diodes On Bulk Gan Substrates

Achievements Showcase Research Cpes

High Voltage B Ga2o3 Schottky Diode With Argon Implanted

Gan Based Schottky Diode Intechopen